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13:38Semiconductor TodayInfineon launches new rad-hard GaN transistors, including DLA JANS-certified device

21.05.25Semiconductor TodayNavitas launches 12kW GaN & SiC platform, achieving 97.8% efficiency for hyperscale AI data centers

20.05.25Semiconductor TodayCEA-Leti reports co-integration of GaN micro-LEDs and organic photodetectors for multi-functional display applications

07.05.25Semiconductor TodayEPC makes available engineering samples of 40V GaN power transistor

06.05.25BenzingaNavitas GaN Adoption Is Slower Than Anticipated: Analyst

01.05.25Semiconductor TodayBeneq Transform ALD cluster tool qualified for GaN power device production by tier-1 Asian manufacturer

30.04.25Semiconductor TodayFraunhofer IAF presents bidirectional 1200V GaN switch with integrated free-wheeling diodes

23.04.25Semiconductor TodayNavitas showcasing advances in GaN and SiC technologies at PCIM, including first production-released 650V bi-directional GaNFast ICs

16.04.25Semiconductor TodayPolar to license Renesas’ GaN-on-Si technology and onshore commercial fabrication of 650V-class devices on 200mm wafers

14.04.25Semiconductor TodayInfineon launches first industrial GaN transistor product family with integrated Schottky diode

10.04.25Semiconductor TodayIQE and X-FAB sign JDA to develop European-based GaN power outsourced manufacturing platform

07.04.25Semiconductor TodayST and Innoscience sign GaN power device technology development and manufacturing agreement

04.04.25Semiconductor Todayimec identifies stable operating range for GaN MISHEMTs in RF power amplifiers

01.04.25BenzingaSTMicroelectronics And Innoscience Partner To Advance GaN Power Technology

28.03.25Semiconductor TodayMazda and ROHM jointly developing automotive components using GaN

20.03.25Semiconductor TodayTI launches integrated GaN power stages in TOLL packages

18.03.25Semiconductor TodayNexperia adds 12 devices to e-mode GaN FET portfolio

18.03.25Semiconductor TodayMitsubishi Electric to ship samples of 3.6-4.0GHz, 16W GaN power amplifier module for 5G mMIMO base stations in North America and East and Southeast Asia

18.03.25Semiconductor TodayEPC launches EPC2367 100V GaN FET with 1.2mΩ on-resistance

17.03.25Semiconductor TodayWise-integration showcasing next-gen GaN power solutions at APEC

11.03.25Semiconductor TodayBluGlass boosts single-mode GaN laser chip output by 67% to record 1250mW

07.03.25Semiconductor Today5N+ sells AZUR subsidiary’s GaN IP portfolio to micro-LED specialist ALLOS

05.03.25Semiconductor TodayROHM launches 650V GaN HEMT in compact, high-heat-dissipation TOLL package

20.02.25Semiconductor TodayBluGlass receives AUS$120,000 order for specialized GaN laser bars

05.02.25Semiconductor TodayNavitas’ GaN and SiC devices adopted in Dell’s family of 60-360W AI notebook adapters

16.01.25Semiconductor TodayGuerrilla RF unveils new GaN-on-SiC HEMT power amplifiers dice for high-performance RF

14.01.25Semiconductor TodayMACOM unveils five-year, $345m plan to expand 100mm GaN and GaAs production and introduce 150mm GaN

14.01.25Semiconductor TodayHigh-breakdown-voltage P-GaN gate HEMTs with threshold voltage of 7.1V

10.01.25Semiconductor TodayTeledyne HiRel releases high-power 30MHz-5GHz RF GaN switch

08.01.25Semiconductor TodayAehr receives initial FOX-XP system order from GaN power semi supplier

02.01.25Business TimesMAS review group exploring use of seed capital for equities market: Gan Kim Yong

12.12.24Semiconductor TodayPenn State gains $3m DARPA grant for GaN-on-silicon project with Northrop Grumman

10.12.24Semiconductor TodayROHM and TSMC collaborating on development and volume production of GaN power devices for EVs

10.12.24Semiconductor TodayEPC launches GaN FET-based reference design for solar PV optimizers

06.12.24Semiconductor TodayNavitas showcasing GaN and SiC technologies at CES 2025

06.12.24Semiconductor TodayVisIC and AVL partner on GaN inverters for EVs

05.12.24Semiconductor TodayGlobalFoundries’ gains $9.5m more in US funding for Vermont 200mm GaN-on-Si chip production

14.11.24Semiconductor TodayCGD and IFPEN demo GaN-based 800VDC inverter that outperforms SiC

13.11.24Semiconductor TodayIndia’s Solid State Physics Lab develops SiC wafers and GaN HEMTs for up to X-band

06.11.24Semiconductor TodayCambridge GaN Devices exhibiting at electronica

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