Renesas adds 650V GaN FETs for high-density power conversion

21.07.25 10:53 Uhr

Renesas Electronics Corp of Tokyo, Japan has introduced three new high-voltage 650V gallium nitride (GaN) FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters...Weiter zum vollständigen Artikel bei Semiconductor Today

Quelle: Semiconductor Today

Nachrichten zu GAN Limited Registered Shs

Wer­bung