EPC Space launches 300V rad-hard GaN FET

EPC Space LLC of Haverhill, MA, USA (which provides high-reliability radiation-hardened enhancement-mode gallium nitride-on-silicon transistors and ICs for power management in space and other harsh environments) has launched the EPC7030MSH, a rad-hard (RH) 300V GaN FET that delivers what is claimed to be unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems...Weiter zum vollständigen Artikel bei Semiconductor Today Weiter zum vollständigen Artikel bei Semiconductor Today