WIN launches linearity optimized 0.12µm GaN power process

WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets — has launched its NP12-1B, a 0.12μm gate-length depletion-mode (D-mode) GaN high-electron-mobility transistor (HEMT) technology on silicon carbide (SiC) substrates...Weiter zum vollständigen Artikel bei Semiconductor Today Weiter zum vollständigen Artikel bei Semiconductor Today