onsemi and Innoscience sign MoU to collaborate on speeding global rollout of GaN power portfolio

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA and China-based Innoscience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 200mm silicon wafers — have signed a non-binding memorandum of understanding (MoU) to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40–200V, and significantly broaden customer adoption...Weiter zum vollständigen Artikel bei Semiconductor Today Weiter zum vollständigen Artikel bei Semiconductor Today