SemiQ adds 7.4, 14.5 and 34mΩ SOT-227 modules to 1200V Gen3 SiC MOSFET line

SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has expanded its family of 1200V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer RDSon values of 7.4mΩ, 14.5mΩ and 34mΩ. The firm’s GCMS modules, which feature Schottky barrier diodes (SBDs), have lower switching losses at high temperature, especially compared to non-SBDs GCMX modules...Weiter zum vollständigen Artikel bei Semiconductor Today Weiter zum vollständigen Artikel bei Semiconductor Today