Innoscience and United Electronics establish joint lab to develop GaN power electronics systems for EVs

25.08.25 12:41 Uhr

InnoScience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 8” silicon wafers — and China’s largest tier-1 automotive supplier United Automotive Electronic Systems Co Ltd (UAES, a joint venture established in 1995 by China’s Zhonglian Automotive Electronics Co Ltd and Germany’s Robert Bosch GmbH) have established a joint laboratory to develop advanced power electronics systems for new energy vehicles using the advantages of GaN technology in size, weight, and efficiency. The two parties held an unveiling ceremony at UAES (Suzhou R&D Center)...Weiter zum vollständigen Artikel bei Semiconductor Today

Quelle: Semiconductor Today

Nachrichten zu GAN Limited Registered Shs

Wer­bung