imec achieves record GaN breakdown exceeding 650V on Shin-Etsu Chemical’s 300mm QST substrate

Tokyo-based Shin-Etsu Chemical Co Ltd says that its QST substrate has been adopted for the 300mm gallium nitride (GaN) power device development program at nanoelectronics research center imec of Leuven, Belgium, where sample evaluation is in progress. In the evaluation, a 5µm-thick high-electron-mobility transistor (HEMT) device achieved a record breakdown voltage, for a 300mm QST substrate, of more than 650V...Weiter zum vollständigen Artikel bei Semiconductor Today Weiter zum vollständigen Artikel bei Semiconductor Today