Infineon introduces trench-based SiC superjunction technology

As a pioneer in the market introduction of silicon carbide (SiC) power devices and trench technology for SiC MOSFETs (combining what is claimed to be excellent performance with high robustness), Infineon Technologies AG of Munich, Germany says that its CoolSiC product line now spans from 400V to 3.3kV and covers a broad range of applications including automotive drivetrains, EV charging, solar energy systems, energy storage, and high-power traction inverters. Building on a track record in SiC business development and leveraging its position as the innovator of charge-compensating devices in silicon (CoolMOS), Infineon is now introducing a trench-based SiC superjunction (TSJ) technology concept...Weiter zum vollständigen Artikel bei Semiconductor Today Weiter zum vollständigen Artikel bei Semiconductor Today