Infineon and ROHM collaborating on silicon carbide power electronics packages

Infineon Technologies AG of Munich, Germany and ROHM Co Ltd of Kyoto, Japan have signed a memorandum of understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, which should increase design and procurement flexibility for customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration should ensure seamless compatibility and interchangeability to match specific customer needs...Weiter zum vollständigen Artikel bei Semiconductor Today Weiter zum vollständigen Artikel bei Semiconductor Today